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HUFA75345P3N-Channel 55 V 75A (Tc) 325W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-HUFA75-920033
ManufacturerOnsemi
MPN #.HUFA75345P3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetHUFA75345G3/P3/S3S(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUFA75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)275 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation325W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUFA75345G3/P3/S3S
Environmental Information
onsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA75345P3 from Onsemi is a robust N-Channel MOSFET housed in a TO-220-3 through-hole package. It is designed to handle a maximum continuous current of 75A and features a breakdown voltage of 55V. The device offers a low on-resistance of 7 milliohms when operating at a gate-source voltage of 10V and a current of 75A, ensuring efficient performance with minimal power loss. Capable of dissipating up to 325W when mounted to an appropriate heatsink, this MOSFET provides reliable switching performance in high-power applications. Additionally, it exhibits a gate threshold voltage of 4V at 250µA, which allows for effective control in a range of circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.