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HUFA75344S3SN-Channel 55 V 75A (Tc) 285W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-HUFA75-965409
ManufacturerOnsemi
MPN #.HUFA75344S3S
Estimated Lead Time-
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DatasheetDatasheetHUFA75344G3,P3,S3(S)(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUFA75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)210 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3200 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation285W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 75A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Extended Links
Datasheets
HUFA75344G3,P3,S3(S)
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA75344S3S is an N-channel MOSFET manufactured by Onsemi, designed for efficient power handling and featuring a maximum drain-source voltage of 55V and a continuous drain current of up to 75A under specified conditions. It is housed in a TO-263 (D2PAK) surface mount package, capable of dissipating a maximum power of 285W. The device exhibits a low on-state resistance of 8 milliohms when operating at a gate-source voltage of 10V and carrying a current of 75A. Additionally, it has an input capacitance of 3200 pF at 25V, making it suitable for high-speed switching environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.