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HUFA75337S3SN-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-HUFA75-960669
ManufacturerOnsemi
MPN #.HUFA75337S3S
Estimated Lead Time-
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DatasheetDatasheetHUFA75337G3/P3/S3S(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUFA75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)109 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1775 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation175W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 75A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUFA75337G3/P3/S3S
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part HUFA75337S3S, manufactured by Onsemi, is a high-performance N-Channel MOSFET designed for surface mounting in electronic circuits. It comes in a TO-263 (D2PAK) package, offering robust capabilities with a maximum drain-source voltage of 55 volts and a continuous drain current of up to 75 amperes at a case temperature. This device features a power dissipation of 175 watts, making it suitable for handling significant amounts of power. With a total gate charge of 109 nanocoulombs at 20 volts and a threshold voltage of 10 volts, it exhibits efficient switching performance. The HUFA75337S3S is characterized by its metal oxide semiconductor construction, enhancing its reliability and efficiency in various circuits.
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