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HUF76439P3N-Channel 60 V 75A (Tc) 180W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-HUF764-1037875
ManufacturerOnsemi
MPN #.HUF76439P3
Estimated Lead Time-
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DatasheetHUF76439P3, HUF76439S3S(PDF)
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUF76
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2745 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance12mOhm @ 75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF76439P3 is an N-channel power MOSFET manufactured by Onsemi, designed for use in high-power applications. It features a maximum drain-source voltage of 60 volts and can handle a continuous drain current of 75 amperes when the case temperature (Tc) is controlled. The device is encapsulated in a TO-220-3 through-hole package, allowing for efficient thermal management, and has a power dissipation capacity of 180 watts. With a gate threshold voltage of 3 volts at 250 microamperes, an input capacitance of 2745 picofarads at 25 volts, and a total gate charge of 84 nanocoulombs at 10 volts, this MOSFET is engineered to deliver reliable electrical performance in demanding conditions.
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