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HUF76419S3ST-F085N-Channel 60 V 29A (Tc) 100W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-HUF764-1007118
ManufacturerOnsemi
MPN #.HUF76419S3ST-F085
Estimated Lead Time-
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberHUF76
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28.5 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)870 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation100W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance35mOhm @ 29A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
1Q2018 Product EOL 31/Mar/2018
PCN Packaging
Mult Devices 24/Oct/2017TO263 Dev Pkg Chg 24/May/2018
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Driving Automotive Technology
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF76419S3ST-F085 is a robust N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic circuits. It operates with a maximum voltage of 60 V and can handle a current of up to 29A. The MOSFET is capable of dissipating 100W under specified thermal conditions and comes in a surface-mount TO-263 (D2PAK) package, facilitating effective heat dissipation in compact applications. It features a total gate charge of 28.5 nC when driven at 10 V, indicating its suitability for moderate to high-frequency switching applications. The device also has a threshold voltage of 3V at a drain current of 250µA, contributing to its operational efficiency and reliability.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.