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HUF75345P3N-Channel 55 V 75A (Tc) 325W (Tc) Through Hole TO-220-3

1:$2.3600

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-HUF753-962086
ManufacturerOnsemi
MPN #.HUF75345P3
Estimated Lead Time19 Weeks
SampleGet Free Sample
DatasheetDatasheetHUF75345G3/P3/S3S(PDF)
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In Stock: 4754
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3600
Ext. Price$ 2.3600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3600$2.3600
50$1.8920$94.6160
100$1.5580$155.7630
500$1.3180$658.7500
1000$1.1190$1118.8130
2000$1.0610$2122.8750
5000$1.0220$5110.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberHUF75345
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)275 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation325W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUF75345G3/P3/S3S
Environmental Information
Material Declaration HUF75345P3onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75345P3, manufactured by Onsemi, is an N-Channel MOSFET designed to handle substantial power with its capacity to support 75A and withstand voltages up to 55V. Encased in a TO-220-3 through-hole package, this component is engineered for robust thermal management, with a maximum power dissipation of 325W when mounted on an appropriate heat sink. It features a gate charge of 275 nC and operates with a gate-source voltage ranging from 0 to 20V, while tolerating a maximum gate-source voltage of ±20V. Its electrical specifications make it suitable for demanding applications requiring efficient power switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.