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HUF75344S3STN-Channel 55 V 75A (Tc) 285W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-HUF753-939701
ManufacturerOnsemi
MPN #.HUF75344S3ST
Estimated Lead Time-
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DatasheetDatasheetHUF75344G3,P3,S3(S)(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberHUF75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)210 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3200 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation285W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 75A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUF75344G3,P3,S3(S)
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75344S3ST is a high-performance N-Channel MOSFET manufactured by Onsemi. It is designed for surface mounting with a TO-263 (D2PAK) package, providing a compact solution suitable for thermal management. This MOSFET can handle a maximum voltage of 55 V and a continuous current of up to 75 A at the case temperature (Tc) while dissipating up to 285 W of power. It features a low on-resistance of 8 milliohms at 75 A and 10 V, enhancing its efficiency in power handling. Additionally, the device has a total gate charge of 210 nC at 20 V, making it suitable for quick switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.