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HUF75339P3N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-220-3
1:$1.5610
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-HUF753-924032
ManufacturerOnsemi
MPN #.HUF75339P3
Estimated Lead Time19 Weeks
SampleGet Free Sample
DatasheetHUF75339P3(PDF)
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In Stock: 519
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 1.5610
Ext. Price$ 1.5610
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5610$1.5610
50$1.2520$62.6000
100$1.0300$103.0000
500$0.8710$435.5000
1000$0.7390$739.0000
2000$0.7030$1406.0000
5000$0.6760$3380.0000
10000$0.6540$6540.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberHUF75339
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance12mOhm @ 75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)