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HUF75333S3STN-Channel 55 V 66A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-HUF753-978697
ManufacturerOnsemi
MPN #.HUF75333S3ST
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetHUF75333G3/P3/S3S/S3(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberHUF75
Continuous Drain Current (ID) @ 25°C66A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)85 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 66A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUF75333G3/P3/S3S/S3
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75333S3ST is a surface mount MOSFET manufactured by Onsemi, designed with an N-Channel configuration. It is capable of handling a drain-source voltage of up to 55 volts and can sustain a continuous drain current of 66 amps when mounted to a suitable heatsink, owing to its power dissipation capability of up to 150 watts. Packaged in a TO-263 (D2PAK) form factor, this component offers a low on-state resistance of 16 milliohms when measured at 66 amps with a gate-source voltage of 10 volts. The device is resilient to gate-to-source voltage transients of up to ±20 volts, making it a robust choice for various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.