ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
HUF75329D3SN-Channel 55 V 20A (Tc) 128W (Tc) Surface Mount TO-252AA

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-HUF753-990093
ManufacturerOnsemi
MPN #.HUF75329D3S
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetHUF75329D3(S)(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUF75
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1060 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation128W (Tc)
RDS(on) Drain-to-Source On Resistance26mOhm @ 20A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUF75329D3(S)
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75329D3S, manufactured by Onsemi, is an N-channel MOSFET designed for power management applications. This component can handle a maximum drain-source voltage of 55 volts and a continuous drain current of 20 amps under specified conditions. It offers a power dissipation capacity of 128 watts in a surface mount TO-252AA package. Key electrical characteristics include a gate-source voltage of ±20 volts and a gate charge of 1060 pF at a 25-volt drain-source voltage. It features a low on-state resistance of 26 milliohms at a drain current of 20 amps with a gate-source voltage of 10 volts, making it efficient for high current and low voltage applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.