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HUF75321P3N-Channel 55 V 35A (Tc) 93W (Tc) Through Hole TO-220-3

1:$1.2650

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-HUF753-1038063
ManufacturerOnsemi
MPN #.HUF75321P3
Estimated Lead Time19 Weeks
SampleGet Free Sample
DatasheetDatasheetHUF75321P3(PDF)
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In Stock: 349
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.2650
Ext. Price$ 1.2650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2650$1.2650
50$1.0150$50.7340
100$0.8050$80.5380
500$0.6820$341.0630
1000$0.5560$555.6880
2000$0.5240$1047.6250
5000$0.4980$2491.5630
10000$0.4750$4749.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberHUF75321
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)680 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation93W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 35A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUF75321P3
Environmental Information
Material Declaration HUF75321P3onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75321P3, manufactured by Onsemi, is an N-channel MOSFET designed to handle a maximum drain-source voltage of 55 volts and a continuous drain current of 35 amperes when mounted with proper heat sinking (under thermal control specified conditions). Encased in a TO-220-3 package, this through-hole component can dissipate up to 93 watts of power, reflecting its suitability for medium to high-power applications requiring efficient power handling. The MOSFET exhibits a gate threshold voltage of 4 volts at a gate current of 250 microamperes, and a low RDS(on) of 34 milliohms at a drain current of 35 amperes with 10 volts applied to the gate, ensuring reduced conduction losses. Additionally, it supports a gate-source voltage range of ±20 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.