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HUF75321D3STN-Channel 55 V 20A (Tc) 93W (Tc) Surface Mount TO-252AA

1:$0.5460

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ABRmicro #.ABR2045-HUF753-992346
ManufacturerOnsemi
MPN #.HUF75321D3ST
Estimated Lead Time31 Weeks
SampleGet Free Sample
DatasheetDatasheetHUF75321D3ST Datasheet(PDF)
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In Stock: 3037
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5460
Ext. Price$ 0.5460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5460$0.5460
10$0.4490$4.4940
100$0.3500$34.9560
500$0.2950$147.6880
1000$0.2930$293.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltraFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberHUF75321
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)680 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation93W (Tc)
RDS(on) Drain-to-Source On Resistance36mOhm @ 20A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUF75321D3ST Datasheet
Environmental Information
Material Declaration HUF75321D3STonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult PN Mold/Source 01/Dec/2023
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUF75321D3ST is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with a TO-252AA package. It is capable of handling up to 55 volts and 20 amps, with a power dissipation of 93 watts when properly mounted on a heat-conducting surface. This MOSFET features a low on-resistance of 36 milliohms at 20 amps and a gate threshold voltage of 4 volts at a gate current of 250 microamps. These specifications make it suitable for efficient voltage control and switching in electrical circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.