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FQU4N50TU-WSN-Channel 500 V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-FQU4N5-1002649
ManufacturerOnsemi
MPN #.FQU4N50TU-WS
Estimated Lead Time-
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DatasheetDatasheetFQU4N50TU_WS(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQU4N50
Continuous Drain Current (ID) @ 25°C2.6A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)460 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 45W (Tc)
RDS(on) Drain-to-Source On Resistance2.7Ohm @ 1.3A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQU4N50TU_WS
Environmental Information
Material Declaration FQU4N50TU-WSonsemi REACHonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQU4N50TU-WS from Onsemi is a robust N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 500 V. It can handle a continuous current of 2.6 A when mounted on a suitable heat sink (Tc) and dissipates 2.5 W of power when in a standard room temperature environment (Ta), while it can dissipate up to 45 W with adequate cooling (Tc). This MOSFET exhibits an on-resistance of 2.7 Ohm at a drain current of 1.3 A and a gate-to-source voltage of 10 V. Encased in a compact IPAK through-hole package, it also has an input capacitance of 460 pF with a measurement condition of 25 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.