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FQU3N40TUN-Channel 400 V 2A (Tc) 2.5W (Ta), 30W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-FQU3N4-984561
ManufacturerOnsemi
MPN #.FQU3N40TU
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQD3N40, FQU3N40(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQU3
Continuous Drain Current (ID) @ 25°C2A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance3.4Ohm @ 1A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD3N40, FQU3N40
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQU3N40TU is an N-Channel MOSFET manufactured by Onsemi, designed to handle voltages up to 400V and currents of 2A when the case temperature is optimized. It features a power dissipation of 2.5W in free air and can handle up to 30W with proper heat sinking. The device comes in a Through Hole IPAK package, ensuring easy integration into various electronic assemblies. With an on-resistance of 3.4 Ohms at 1A and 10V, and a gate threshold voltage of 5V at 250µA, it provides reliable switching performance for applications requiring moderate power handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.