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FQU2N90TU-WSN-Channel 900 V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-FQU2N9-1021830
ManufacturerOnsemi
MPN #.FQU2N90TU-WS
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQD2N90, FQU2N90(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQU2N90
Continuous Drain Current (ID) @ 25°C1.7A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance7.2Ohm @ 850mA, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD2N90, FQU2N90
Environmental Information
Material Declaration FQU2N90TU-WSonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi part FQU2N90TU-WS is an N-channel MOSFET designed for high-voltage applications, with a maximum voltage rating of 900V. It supports a continuous current of 1.7A at a case temperature (Tc) and a power dissipation of 2.5W in free-air conditions and up to 50W at Tc. The device comes in a through-hole IPAK package, enhancing its thermal performance and durability. It features an input capacitance of 500 pF at 25V and a drain-source on-resistance of 7.2 Ohms when operating at 850mA with a gate-source voltage of 10V, making it suitable for various switching tasks in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.