ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FQU13N06LTUN-Channel 60 V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQU13N-1006054
ManufacturerOnsemi
MPN #.FQU13N06LTU
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQD13N06LTM Datasheet(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQU13N06
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 28W (Tc)
RDS(on) Drain-to-Source On Resistance115mOhm @ 5.5A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD13N06LTM Datasheet
Environmental Information
Material Declaration FQU13N06LTUonsemi RoHS
PCN Assembly/Origin
Mult Dev Site Add 14/Oct/2020
PCN Design/Specification
FQD13N06 22/Jul/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQU13N06LTU is an N-Channel MOSFET designed for efficient switching in various electrical circuits. It operates with a drain-source voltage rating of 60 V and can handle a continuous drain current of up to 11 A when adequately cooled. This component features a power dissipation of 2.5W in open air (Ta) conditions and up to 28W when mounted on a heatsink (Tc). It is enclosed in an IPAK through-hole package, facilitating straightforward installation onto circuit boards. With a gate charge of 6.4 nC at 5 V, the FQU13N06LTU provides suitable gate control for switching operations. Furthermore, it supports a gate-source voltage of ±20V, allowing for stable operation within this range.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.