ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FQU10N20LTUN-Channel 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole IPAK

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQU10N-1037085
ManufacturerOnsemi
MPN #.FQU10N20LTU
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQD10N20L, FQU10N20L(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQU1
Continuous Drain Current (ID) @ 25°C7.6A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)830 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 51W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 3.8A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD10N20L, FQU10N20L
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQU10N20LTU is an N-channel MOSFET manufactured by Onsemi. It is designed for high-efficiency performance with a maximum drain-source voltage of 200 V and a continuous drain current of 7.6 A at a case temperature (Tc). The device supports a low gate threshold voltage of 2V at a gate current of 250 µA, which facilitates easy triggering. It features a total gate charge of 17 nC at 5 V and shows tolerance to gate-source voltages up to ±20 V. The power dissipation capability is rated at 2.5 W when mounted directly on a printed circuit board and can handle up to 51 W at Tc. This MOSFET is packaged in an IPAK through-hole configuration, suitable for various high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.