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FQT13N06LTFN-Channel 60 V 2.8A (Tc) 2.1W (Tc) Surface Mount SOT-223-4
N/A
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ABRmicro #.ABR2045-FQT13N-1022243
ManufacturerOnsemi
MPN #.FQT13N06LTF
Estimated Lead Time-
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DatasheetFQT13N06L(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFQT13N06
Continuous Drain Current (ID) @ 25°C2.8A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 1.4A, 10V
Package Type (Mfr.)SOT-223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-261-4, TO-261AA
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQT13N06LTF is a semiconductor component manufactured by Onsemi, designed as an N-Channel MOSFET. It operates at a maximum voltage of 60V and can handle a current of up to 2.8A at the case temperature (Tc). The device features a power dissipation capability of 2.1W, also at Tc. It is housed in a SOT-223-4 surface-mount package, facilitating easy integration into circuit boards. The MOSFET showcases a gate charge of 6.4 nC at 5V, and it accommodates gate-source voltages in the range of ±20V.
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