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FQPF8N60CFTN-Channel 600 V 6.26A (Tc) 48W (Tc) Through Hole TO-220F-3

1:$1.7870

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQPF8N-1004163
ManufacturerOnsemi
MPN #.FQPF8N60CFT
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQPF8N60CF(PDF)
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In Stock: 700
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.7870
Ext. Price$ 1.7870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7870$1.7870
50$1.4370$71.8250
100$1.1820$118.1500
500$1.0000$499.9060
1000$0.8480$847.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesFRFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF8
Continuous Drain Current (ID) @ 25°C6.26A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1255 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 3.13A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQPF8N60CF
Environmental Information
Material Declaration FQPF8N60CFTonsemi RoHS
PCN Assembly/Origin
Assembly/Test 17/Nov/2023
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF8N60CFT, manufactured by Onsemi, is an N-channel MOSFET designed for high voltage and high current applications. It features a 600V drain-source voltage and a continuous drain current of 6.26A when operating at the case temperature (Tc). The device can dissipate up to 48W of power under these conditions. Encased in a TO-220F-3 package, this MOSFET provides a gate charge of 36nC at a gate-source voltage of 10V and can handle gate-source voltages of up to ±30V. The through-hole design facilitates ease of mounting for integration into various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.