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FQPF7N60N-Channel 600 V 4.3A (Tc) 48W (Tc) Through Hole TO-220F-3

1:$2.3510

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ABRmicro #.ABR2045-FQPF7N-1003977
ManufacturerOnsemi
MPN #.FQPF7N60
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQPF7N60(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 2.3510
Ext. Price$ 2.3510
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* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF7
Continuous Drain Current (ID) @ 25°C4.3A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1430 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 2.2A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQPF7N60
Environmental Information
Material Declaration FQPF7N60onsemi REACHonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF7N60 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient switching and power management. It can handle a drain-source voltage of 600 V and a continuous drain current of 4.3 A at a case temperature of 25°C, with a power dissipation capability of up to 48 W. It comes in a TO-220F-3 package, which is a through-hole component for use in a variety of electronic circuits. The MOSFET features a gate charge of 38 nC at 10 V, making it suitable for rapid switching and reduced power loss in thermal management applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.