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FQPF7N10LN-Channel 100 V 5.5A (Tc) 23W (Tc) Through Hole TO-220F-3
N/A
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ABRmicro #.ABR2045-FQPF7N-998393
ManufacturerOnsemi
MPN #.FQPF7N10L
Estimated Lead Time-
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DatasheetFQPF7N10L(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF7
Continuous Drain Current (ID) @ 25°C5.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)290 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation23W (Tc)
RDS(on) Drain-to-Source On Resistance350mOhm @ 2.75A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF7N10L, manufactured by Onsemi, is an N-Channel MOSFET designed for use in various electronic applications requiring efficient power management. This component can handle a maximum voltage of 100 V and a continuous current of 5.5A under optimal conditions. It comes in a TO-220F-3 package, which aids in heat dissipation up to 23W when properly mounted. The device features a gate-source voltage rating of ±20V and has a gate charge of 6 nC at 5 V. It also exhibits an input capacitance of 290 pF at a voltage of 25 V, making it suitable for circuit designs where these parameters are critical.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.