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FQPF6N90N-Channel 900 V 3.4A (Tc) 56W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FQPF6N-940870
ManufacturerOnsemi
MPN #.FQPF6N90
Estimated Lead Time-
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DatasheetDatasheetFQPF6N90(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF6
Continuous Drain Current (ID) @ 25°C3.4A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1880 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation56W (Tc)
RDS(on) Drain-to-Source On Resistance1.9Ohm @ 1.7A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Extended Links
Datasheets
FQPF6N90
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF6N90 is an N-channel MOSFET manufactured by Onsemi, designed for high-voltage applications with a drain-source breakdown voltage of 900V and a continuous drain current of 3.4A at a case temperature (Tc). This MOSFET efficiently manages power with its 56W power dissipation capability at Tc. Housed in a TO-220F-3 package for through-hole mounting, it features a drain-source on-resistance of 1.9 ohms at 1.7A and 10V. Additionally, it possesses an input capacitance of 1880 pF at 25V and can tolerate gate-source voltages up to ±30V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.