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FQPF6N80N-Channel 800 V 3.3A (Tc) 51W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FQPF6N-1011819
ManufacturerOnsemi
MPN #.FQPF6N80
Estimated Lead Time-
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DatasheetDatasheetFQPF6N80(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF6
Continuous Drain Current (ID) @ 25°C3.3A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation51W (Tc)
RDS(on) Drain-to-Source On Resistance1.95Ohm @ 1.65A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQPF6N80
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF6N80 is an N-Channel MOSFET manufactured by Onsemi, featuring a maximum voltage rating of 800 V and a continuous current capability of 3.3A under Tc conditions. It is designed with a power dissipation capacity of 51W, also under Tc conditions. The device is encapsulated in a TO-220F-3 through-hole package for effective thermal management and ease of mounting. It offers a typical input capacitance of 1500 pF at 25 V and features a relatively low on-resistance of 1.95 Ohm when operating at 1.65A with a gate-source voltage of 10V, making it suitable for efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.