The FQPF3N80C, manufactured by Onsemi, is an N-channel MOSFET designed for high-voltage applications, with a maximum drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 3 A (when measured at the case temperature, Tc). It features a power dissipation capability of 39 W, ensuring effective energy management within its operational limits. The MOSFET comes in a TO-220F-3 package, a through-hole design that facilitates easy mounting on printed circuit boards. With a gate threshold voltage of 5 V at a gate current of 250µA, and a gate charge of 16.5 nC measured at 10 V, this component provides efficient electronic switching performance.