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FQPF34N20LN-Channel 200 V 17.5A (Tc) 55W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FQPF34-1038723
ManufacturerOnsemi
MPN #.FQPF34N20L
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQPF34N20L(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF3
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3900 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation55W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 8.75A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQPF34N20L
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF34N20L is an N-Channel MOSFET manufactured by Onsemi, featuring a voltage rating of 200 V and a drain current of 17.5A (Tc). It is designed to dissipate up to 55W of power (Tc) and comes in a through-hole TO-220F-3 package. This MOSFET operates with a low gate threshold voltage of 2V at 250µA and can withstand gate-to-source voltages up to ±20V, making it suitable for efficient switching and amplification duties in a variety of electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.