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FQPF34N20N-Channel 200 V 17.5A (Tc) 55W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FQPF34-968327
ManufacturerOnsemi
MPN #.FQPF34N20
Estimated Lead Time-
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DatasheetDatasheetFQPF34N20(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF3
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)78 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3100 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation55W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 8.75A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Extended Links
Datasheets
FQPF34N20
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF34N20 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power switching applications. It operates at a maximum voltage of 200 V and can handle a continuous current of 17.5A under standard conditions, with a power dissipation capacity of 55W when mounted on a suitable heatsink to maintain the case temperature (Tc). Packaged in a TO-220F-3 through-hole format, it features a total gate charge of 78 nC at 10 V and a threshold voltage of 5V with a gate current of 250µA, making it suitable for moderate power conversion tasks requiring low on-resistance and efficient switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.