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FQPF30N06N-Channel 60 V 21A (Tc) 39W (Tc) Through Hole TO-220F-3
N/A
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ABRmicro #.ABR2045-FQPF30-990789
ManufacturerOnsemi
MPN #.FQPF30N06
Estimated Lead Time-
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DatasheetFQPF30N06(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQPF3
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)945 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation39W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 10.5A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF30N06 is an N-Channel MOSFET manufactured by Onsemi, characterized by its ability to handle a maximum voltage of 60 V and a continuous drain current of 21A at a case temperature (Tc). It features a power dissipation capacity of 39W (Tc), making it suitable for various robust operational requirements. Encased in a TO-220F-3 package, this MOSFET ensures efficient heat dissipation with its through-hole mounting configuration. The device has an input capacitance of 945 pF at 25 V and a total gate charge of 25 nC at 10 V, which are critical parameters for determining its switching performance and efficiency. Additionally, it can tolerate gate-source voltages of up to ±25V.
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