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FQPF19N20CN-Channel 200 V 19A (Tc) 43W (Tc) Through Hole TO-220F-3

1:$1.4110

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQPF19-989501
ManufacturerOnsemi
MPN #.FQPF19N20C
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetFQP19N20C, FQPF19N20C(PDF)
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In Stock: 327
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4110
Ext. Price$ 1.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4110$1.4110
50$1.1350$56.7380
100$0.8990$89.8880
500$0.7620$380.9060
1000$0.6210$620.5000
2000$0.5840$1168.7500
5000$0.5570$2783.7500
10000$0.5310$5312.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFQPF19
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1080 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation43W (Tc)
RDS(on) Drain-to-Source On Resistance170mOhm @ 9.5A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP19N20C, FQPF19N20C
Environmental Information
Material Declaration FQPF19N20Consemi RoHS
PCN Assembly/Origin
Assembly and Test Qualification 26/Jul/2023
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQPF19N20C is an N-Channel MOSFET designed for efficient power management, featuring a maximum drain-source voltage of 200 V and a continuous drain current of 19 A under specific conditions. Housed in a TO-220F-3 package, this MOSFET supports through-hole mounting, making it suitable for various hardware assemblies. It offers a maximum power dissipation of 43 W at the case, and exhibits a drain-source resistance of 170 mOhm at 9.5A and 10V gate-source voltage. Additionally, it can handle a gate-source voltage of up to ±30 V. This combination of characteristics makes it a reliable component for controlling power efficiently in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.