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FQPF18N50V2N-Channel 500 V 18A (Tc) 69W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FQPF18-982651
ManufacturerOnsemi
MPN #.FQPF18N50V2
Estimated Lead Time-
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DatasheetDatasheetFQP(F)18N50V2(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQPF1
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3290 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance265mOhm @ 9A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP(F)18N50V2
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF18N50V2 is an N-channel MOSFET manufactured by Onsemi, designed for high-efficiency performance in a variety of electronic systems. This component operates at a maximum voltage of 500 V and can handle a continuous current of 18A under optimal cooling conditions (Tc). Featuring a power dissipation limit of 69W when mounted on its TO-220F-3 package, it offers reliable thermal performance. Key electrical characteristics include a gate-source voltage threshold at 10V, a capacitance of 3290 pF at 25 V, and a drain-source voltage of 5V at a drain current of 250µA, making it suitable for handling substantial power loads while maintaining stability and integrity.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.