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FQP9N50N-Channel 500 V 9A (Tc) 147W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-FQP9N5-980055
ManufacturerOnsemi
MPN #.FQP9N50
Estimated Lead Time-
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DatasheetFQP9N50(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP9
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1450 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation147W (Tc)
RDS(on) Drain-to-Source On Resistance730mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQP9N50 is an N-channel MOSFET that operates with a drain-source voltage of 500 V and a current rating of 9A at the case temperature (Tc). It is capable of dissipating up to 147W at Tc, making it suitable for a range of power applications. The device is housed in a TO-220-3 through-hole package, which is common for efficient heat dissipation. This MOSFET features a gate charge of 36 nC at 10 V, ensuring efficient switching performance.
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