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FQP6N60N-Channel 600 V 6.2A (Tc) 130W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP6N6-991252
ManufacturerOnsemi
MPN #.FQP6N60
Estimated Lead Time-
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DatasheetDatasheetFQP6N60(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP6
Continuous Drain Current (ID) @ 25°C6.2A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 3.1A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP6N60 is an N-channel MOSFET manufactured by Onsemi, designed for high-voltage applications. It operates with a drain-to-source voltage of up to 600V and can handle a continuous drain current of 6.2A under specified conditions. Encased in a TO-220-3 package suitable for through-hole mounting, it provides a maximum power dissipation of 130W at the case (Tc). Its electrical characteristics include a gate threshold voltage of 10V and an on-resistance of 1.5 Ohm at a drain current of 3.1A and a gate voltage of 10V. The device also features a gate-source voltage rating of ±30V, making it a robust choice for its intended purpose.
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