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FQP4N20N-Channel 200 V 3.6A (Tc) 45W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP4N2-1035234
ManufacturerOnsemi
MPN #.FQP4N20
Estimated Lead Time-
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DatasheetDatasheetFQP4N20(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP4
Continuous Drain Current (ID) @ 25°C3.6A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)220 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 1.8A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Extended Links
Datasheets
FQP4N20
Environmental Information
onsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP4N20, manufactured by Onsemi, is an N-Channel MOSFET designed for high-efficiency power applications. It operates at a maximum voltage of 200 V and can handle current up to 3.6 A under specified conditions, with a power dissipation capacity of 45 W through its TO-220-3 package. The device features a gate charge of 6.5 nC at 10 V and can withstand gate-source voltages of ±30 V. This component is housed in a through-hole package, making it suitable for applications requiring robust thermal and electrical performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.