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FQP45N15V2N-Channel 150 V 45A (Tc) 220W (Tc) Through Hole TO-220-3

1:$2.0930

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQP45N-939434
ManufacturerOnsemi
MPN #.FQP45N15V2
Estimated Lead Time24 Weeks
SampleGet Free Sample
DatasheetDatasheetFQP45N15V2, FQPF45N15V2(PDF)
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In Stock: 230
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.0930
Ext. Price$ 2.0930
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0930$2.0930
50$1.6850$84.2560
100$1.3870$138.6560
500$1.1730$586.5000
1000$0.9960$995.5630
2000$0.9460$1891.2500
5000$0.9110$4552.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFQP45
Continuous Drain Current (ID) @ 25°C45A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)94 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3030 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation220W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 22.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP45N15V2, FQPF45N15V2
Environmental Information
Material Declaration FQP45N15V2onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev A/T Chgs 17/Mar/2023
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP45N15V2, manufactured by Onsemi, is an N-Channel MOSFET designed for efficient power handling tasks. It is capable of withstanding a maximum voltage of 150 V and can handle continuous current up to 45A when properly mounted, offering a power dissipation capacity of 220W. Housed in a TO-220-3 through-hole package, it features a low on-resistance of 40 milliohms at a gate voltage of 10V and a current level of 22.5A. Additionally, it exhibits an input capacitance of 3030 pF at 25 V, making it suitable for various electronic switching and amplification processes. Its MOSFET structure leverages the advantageous properties of metal oxide semiconductors for reliable and effective performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.