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FQP3N80N-Channel 800 V 3A (Tc) 107W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP3N8-1021457
ManufacturerOnsemi
MPN #.FQP3N80
Estimated Lead Time-
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DatasheetDatasheetFQP3N80(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP3
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)690 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation107W (Tc)
RDS(on) Drain-to-Source On Resistance5Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP3N80
Environmental Information
onsemi REACHonsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP3N80 is an N-Channel MOSFET manufactured by Onsemi, designed for high-voltage applications with a maximum drain-source voltage of 800 V. It can handle a continuous drain current of 3 A when at an optimal temperature condition (Tc), and it features a power dissipation of 107 W. Encased in a TO-220-3 package for through-hole mounting, the MOSFET exhibits a gate threshold voltage of 5V at a gate current of 250µA and an on-resistance of 5 Ohms when carrying a current of 1.5 A with a gate-source voltage of 10V. Additionally, it has a total gate charge of 19 nC at 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.