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FQP2P40-F080P-Channel 400 V 2A (Tc) 63W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP2P4-966287
ManufacturerOnsemi
MPN #.FQP2P40-F080
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQP2P40_F080(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP2
Continuous Drain Current (ID) @ 25°C2A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance6.5Ohm @ 1A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP2P40_F080
Environmental Information
Material Declaration FQP2P40-F080onsemi REACHonsemi RoHS
PCN Assembly/Origin
MFG Site Addition 09/Mar/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP2P40-F080 is a P-channel MOSFET manufactured by Onsemi, designed to handle voltages up to 400 V and currents up to 2 A under specified conditions (Tc). It offers a power dissipation capability of up to 63 W when mounted in a through-hole TO-220-3 package. The device has a gate charge of 13 nC at 10 V and a typical input capacitance of 350 pF at 25 V. Its design characteristics make it suitable for efficient performance within its specified electrical parameters.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.