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FQP24N08N-Channel 80 V 24A (Tc) 75W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP24N-961632
ManufacturerOnsemi
MPN #.FQP24N08
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQP24N08(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP24
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 12A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP24N08
Environmental Information
Material Declaration FQP24N08onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP24N08 is an N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 80 V and a continuous current of up to 24A when attached to a suitable heatsink, reflecting a power dissipation capacity of 75W. Encased in a TO-220-3 package, this component is suitable for through-hole mounting. It exhibits a low on-resistance of 60 milliohms when operating at 12A with a gate-source voltage of 10V, ensuring efficient performance. Additionally, the MOSFET has an input capacitance of 750 pF at 25 V, making it a reliable choice for high-power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.