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FQP13N50N-Channel 500 V 12.5A (Tc) 170W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP13N-953124
ManufacturerOnsemi
MPN #.FQP13N50
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQP13N50(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP13
Continuous Drain Current (ID) @ 25°C12.5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2300 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation170W (Tc)
RDS(on) Drain-to-Source On Resistance430mOhm @ 6.25A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP13N50
Environmental Information
Material Declaration FQP13N50onsemi REACHonsemi RoHS
PCN Assembly/Origin
MFG Site Addition 09/Mar/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 21/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP13N50 is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power switching applications. It is capable of handling a drain-source voltage of up to 500 V and a continuous current of 12.5 A at the case temperature. With a power dissipation rating of 170 W at the case, it offers substantial performance in its TO-220-3 through-hole package. The device features a gate threshold voltage of approximately 10 V, with a maximum gate-source voltage of ±30 V, and a typical gate charge of 60 nC at 10 V, making it suitable for use in high-power circuits requiring robust electrical characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.