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FQP12P10P-Channel 100 V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP12P-935525
ManufacturerOnsemi
MPN #.FQP12P10
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQP12P10(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP12
Continuous Drain Current (ID) @ 25°C11.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 5.75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP12P10
Environmental Information
Material Declaration FQP12P10onsemi REACHonsemi RoHS
PCN Assembly/Origin
MFG Site Addition 09/Mar/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQP12P10 is a P-channel MOSFET designed to handle significant power demands, incorporating features suitable for through hole mounting in a TO-220-3 package. It can operate effectively with a voltage of up to 100 V and supports a continuous current of 11.5 A at a case temperature (Tc), delivering a power dissipation capacity of up to 75 W (Tc). The MOSFET exhibits an input capacitance of 800 pF at 25 V and a maximum on-resistance of 290 milliohms with a drain current of 5.75 A at 10 V. It is also capable of withstanding gate-source voltages of ±30 V, emphasizing its robustness in electrical stress conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.