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FQN1N60CTAN-Channel 600 V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3

1:$0.5130

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ABRmicro #.ABR2045-FQN1N6-944868
ManufacturerOnsemi
MPN #.FQN1N60CTA
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQN1N60C(PDF)
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In Stock: 12067
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Cut Tape (CT)Tape & Box (TB)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5130
Ext. Price$ 0.5130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5130$0.5130
10$0.4370$4.3670
100$0.3040$30.3880
500$0.2370$118.4690
1000$0.1920$192.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Cut Tape (CT)
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberFQN1N60
Continuous Drain Current (ID) @ 25°C300mA (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)170 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta), 3W (Tc)
RDS(on) Drain-to-Source On Resistance11.5Ohm @ 150mA, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQN1N60C
Environmental Information
Material Declaration FQN1N60CTAonsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer Fab 28/Jul/2021
PCN Design/Specification
Drawing Update 18/Apr/2021Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQN1N60CTA is a MOSFET developed by Onsemi, featuring an N-channel configuration. It is capable of handling voltages up to 600 V and a current of 300 mA (Tc). This transistor offers a power dissipation of 1W when operated in open-air environments and 3W under case conditions. Encased in a TO-92-3 package, the device is suitable for through-hole mounting. It operates effectively with a gate-source voltage threshold of 4V at 250µA and supports up to 10V, making it a versatile component for various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.