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FQI7N80TUN-Channel 800 V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole TO-262 (I2PAK)

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ABRmicro #.ABR2045-FQI7N8-1005194
ManufacturerOnsemi
MPN #.FQI7N80TU
Estimated Lead Time-
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DatasheetDatasheetFQI7N80(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQI7N80
Continuous Drain Current (ID) @ 25°C6.6A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 167W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 3.3A, 10V
Package Type (Mfr.)TO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQI7N80
Environmental Information
Material Declaration FQI7N80TUonsemi RoHS
PCN Assembly/Origin
Mult Dev Material Chgs 14/Oct/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Dev Box Chgs 1/Jul/2021Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQI7N80TU is a high-voltage N-channel MOSFET designed for efficient and reliable performance. It features an 800V drain-source voltage capability and a drain current of 6.6A under specific conditions. The part offers a total power dissipation of 3.13W at ambient temperature and 167W at the case temperature, highlighting its suitability for through-hole mounting applications. Packaged in a TO-262 (I2PAK) configuration, it provides a gate charge of 52 nC at 10V and a capacitance of 1850 pF at a 25V measurement. The FQI7N80TU is engineered to deliver strong performance metrics in proper electrical setups with these specifications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.