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FQI50N06TUN-Channel 60 V 50A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-262 (I2PAK)

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ABRmicro #.ABR2045-FQI50N-934100
ManufacturerOnsemi
MPN #.FQI50N06TU
Estimated Lead Time-
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQI50N06
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)41 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1540 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 120W (Tc)
RDS(on) Drain-to-Source On Resistance22mOhm @ 25A, 10V
Package Type (Mfr.)TO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQI50N06TU by Onsemi is an N-Channel MOSFET designed to handle a maximum voltage of 60V and a continuous current of up to 50A (at Tc). It features a low on-resistance of 22mOhm at a gate-source voltage of 10V and a drain current of 25A, ensuring efficient performance with minimal energy loss. This device is capable of dissipating 3.75W of power in free air conditions (Ta) and 120W when mounted on a suitable heat sink (Tc). Packaged in a TO-262 (I2PAK) through-hole format, it facilitates easy installation and effective thermal management. The MOSFET operates with a gate threshold voltage of 4V at a test current of 250µA, allowing for reliable switching in various electronic applications.
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