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FQD5N50CTM_F080N-Channel 500 V 4A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FQD5N5-951661
ManufacturerOnsemi
MPN #.FQD5N50CTM_F080
Estimated Lead Time-
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DatasheetDatasheetFQ(D,U)5N50C(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD5
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)625 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 48W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 2A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQ(D,U)5N50C
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 14/Mar/2011
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD5N50CTM_F080 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient electrical performance in a compact package. It supports a voltage rating of 500 V and a current rating of 4 A (Tc), making it suitable for moderate power applications. The component boasts a power dissipation of 2.5W when operating in ambient conditions and up to 48W when heatsink mounted (Tc). Encased in the surface-mount TO-252AA package, it provides advantages in space-constrained designs. The gate threshold voltage is specified at 4V with a current of 250µA, ensuring proper operation within the specified parameters, and it features a capacitance of 625 pF at 25 V, contributing to its switching performance.
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