ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FQD4N25TMN-Channel 250 V 3A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount TO-252AA

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQD4N2-1015439
ManufacturerOnsemi
MPN #.FQD4N25TM
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD4
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)200 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 37W (Tc)
RDS(on) Drain-to-Source On Resistance1.75Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD4N25TM is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. This semiconductor component is capable of handling a voltage up to 250 V and a current of 3A when experienced through the case temperature (Tc), with a power dissipation capacity of 2.5W in ambient conditions (Ta) and 37W when the case is considered (Tc). It features a resistance of 1.75 Ohm at a current of 1.5A and a 10V gate-source voltage. The part also supports a gate-source voltage variation (Vgs) of ±30V, making it suitable for various switching tasks. The part is housed in a TO-252AA package, facilitating its integration into electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.