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FQD3N40TMN-Channel 400 V 2A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FQD3N4-1040005
ManufacturerOnsemi
MPN #.FQD3N40TM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQD,FQU3N40(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD3
Continuous Drain Current (ID) @ 25°C2A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance3.4Ohm @ 1A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD,FQU3N40
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD3N40TM is a semiconductor component manufactured by Onsemi, characterized as an N-Channel MOSFET. It is designed to accommodate a maximum drain-source voltage of 400 V and support a continuous current of up to 2A when properly mounted with adequate thermal management (Tc condition). The device features a power dissipation capability of 2.5W under ambient conditions and 30W when an optimal cooling setup is in place (Tc). It comes in a surface-mountable TO-252AA package, making it suitable for compact designs. Additionally, it has a total gate charge of 7.5 nC at a gate-source voltage of 10 V, with a gate threshold rated for up to ±30V, allowing for efficient switching performance in relevant circuit applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.