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FQD3N30TMN-Channel 300 V 2.4A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FQD3N3-948240
ManufacturerOnsemi
MPN #.FQD3N30TM
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD3
Continuous Drain Current (ID) @ 25°C2.4A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance2.2Ohm @ 1.2A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD3N30TM is a surface mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 300 V and a continuous current of 2.4 A when mounted on a suitable heatsink (Tc), supporting power dissipation of 30 W (Tc) and 2.5 W (Ta). It features the TO-252AA package, ideal for compact applications. The MOSFET has a gate-source voltage rating of ±30 V and exhibits a typical input capacitance of 230 pF at 25 V, ensuring efficient switching performance, with a threshold voltage of 5 V at a specified current of 250 µA.
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