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FQD30N06LTMN-Channel 60 V 24A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
N/A
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ABRmicro #.ABR2045-FQD30N-1040123
ManufacturerOnsemi
MPN #.FQD30N06LTM
Estimated Lead Time-
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DatasheetFQD30N06L, FQU30N06L(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD3
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1040 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 44W (Tc)
RDS(on) Drain-to-Source On Resistance39mOhm @ 12A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD30N06LTM is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 60V and a continuous current up to 24A when properly heat-sunk (Tc) or 2.5W of power dissipation for free air (Ta). Encased in a compact TO-252AA package, this component supports gate-source voltage ratings of up to ±20V, making it suitable for various switching and amplification tasks in electronic circuits. It features a threshold voltage of 2.5V at a gate current of 250µA, and offers performance under gate driving voltages of 5V or 10V, making it a versatile choice for designs requiring efficient power handling and compact surface mounting.
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