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FQD30N06LTFN-Channel 60 V 24A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FQD30N-980763
ManufacturerOnsemi
MPN #.FQD30N06LTF
Estimated Lead Time-
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DatasheetDatasheetFQD30N06L, FQU30N06L(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD3
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1040 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 44W (Tc)
RDS(on) Drain-to-Source On Resistance39mOhm @ 12A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD30N06L, FQU30N06L
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD30N06LTF is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic circuits. It supports a maximum drain-source voltage of 60 volts and can handle continuous currents up to 24 amperes when properly mounted (Tc). The component features a low on-resistance of 39 milliohms when conducting 12 amperes at a gate-source voltage of 10 volts, ensuring minimal power loss. It comes in a compact TO-252AA surface-mount package, capable of dissipating 2.5 watts in free air (Ta) and up to 44 watts with proper heat sinking (Tc). The gate charge is specified as 20 nanocoulombs at a gate voltage of 5 volts, facilitating effectual switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.