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FQD2P40TMP-Channel 400 V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA

1:$0.8040

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQD2P4-1039010
ManufacturerOnsemi
MPN #.FQD2P40TM
Estimated Lead Time34 Weeks
SampleGet Free Sample
DatasheetDatasheetFQD2P40(PDF)
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In Stock: 3682
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.8040
Ext. Price$ 0.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8040$0.8040
10$0.6580$6.5770
100$0.5120$51.2130
500$0.4350$217.2810
1000$0.3530$352.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFQD2P40
Continuous Drain Current (ID) @ 25°C1.56A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 38W (Tc)
RDS(on) Drain-to-Source On Resistance6.5Ohm @ 780mA, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQD2P40
Environmental Information
Material Declaration FQD2P40TMonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly 13/Jun/2024
PCN Design/Specification
Logo 17/Aug/2017Postponed Qualification 27/Dec/2022
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD2P40TM is a P-Channel MOSFET manufactured by Onsemi, designed for high-voltage applications, featuring a 400 V maximum drain-source voltage and a drain current capacity of 1.56A when case temperature is considered. Packaged in a compact TO-252AA surface mount, it offers a power dissipation capability of 2.5W at ambient temperature and up to 38W when cooled appropriately. The device exhibits a typical on-resistance (Rds(on)) of 6.5 Ohms at a drain current of 780mA and a gate-source voltage of 10V, and it supports a gate-source voltage rating of ±30V. This MOSFET is suitable for systems that require efficient switching performance at higher voltages.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.