FQD2N60CTMN-Channel 600 V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
1:$0.7350
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ABRmicro #.ABR2045-FQD2N6-1007248
ManufacturerOnsemi
MPN #.FQD2N60CTM
Estimated Lead Time34 Weeks
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Datasheet
FQD2N60C, FQU2N60C(PDF)
FQD2N60C, FQU2N60C(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7350
Ext. Price$ 0.7350
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7350$0.7350
10$0.6350$6.3540
100$0.4410$44.0940
500$0.3680$183.8130
1000$0.3130$313.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFQD2N60
Continuous Drain Current (ID) @ 25°C1.9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)235 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 44W (Tc)
RDS(on) Drain-to-Source On Resistance4.7Ohm @ 950mA, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Other Related Documents
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD2N60CTM by Onsemi is a surface mount N-channel MOSFET housed in a TO-252AA package. It is designed to handle a maximum drain-source voltage of 600 V and a continuous drain current of 1.9 A under conditions specified by the manufacturer. The device offers a total power dissipation capability of 2.5 W when mounted on a surface, and up to 44 W with proper heat sinking. It features a gate charge of 12 nC at 10 V and can handle gate-source voltages of up to ±30 V. The MOSFET exhibits a gate threshold voltage of 4 V at a test current of 250µA, making it suitable for various switching applications.
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