The FQD1N80TF by Onsemi is a semiconductor component categorized as an N-Channel MOSFET, specifically designed for high-voltage applications. It features a maximum drain-source voltage of 800 V and can handle a drain current of 1A under specified conditions. The device is housed in a compact TO-252AA surface-mount package, contributing to efficient thermal performance with power dissipation ratings of 2.5W when mounted on a PCB and 45W when properly heatsinked. The MOSFET exhibits an on-resistance of 20 Ohms at a drain current of 500 mA and a gate voltage of 10 V, with a total gate charge of 7.2 nC recorded at 10 V, indicating its switching performance capabilities.